Optoelectronics

Excelitas C30659 Series - 900/1060/1550/1550E

Si and InGaAs APD Preamplifier Modules Excelitas Technologies’ C30659 Series includes a Si or InGaAs Avalanche Photodiode (APD) with a hybrid preamplifier, in the same hermetically-sealed TO-8 package, to allow for ultra-low noise operation. The Si APDs used in these devices are the same as used in Excelitas’ C30817EH, C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the C30645EH and C30662EH products. These detectors provide very good response between 830 and 1550 nm and very fast rise- and fall-times at all wavelengths. The preamplifier section of the module uses a very low noise GaAs FET front end designed to operate at higher transimpedance than Excelitas’ regular C30950 Series. Excelitas’ InGaAs C30659-1550E Preamplifier Modules, with 1550 nm peak response, are designed to exhibit higher damage thresholds, thus providing greater resilience when exposed to high optical power densities. Customization of the C30659 Series of APD Preamplifier Modules is available to meet your specific design challenges; modifications include bandwidth and gain optimization, use of different APDs, FC-connectorized packaging. Applications - LIDAR - Range finding - Laser designation - Confocal microscopy - High-speed, extreme low-light detection - Distributed temperature sensing (DTS) - Analytical instrumentation - High-speed, free-space optical communication

Features

- System bandwidths of 50 and 200MHz - Ultra low noise equivalent power (NEP) - Spectral response range: o With Si APD: 400 to 1100 nm o With InGaAs APD: 1100 to 1700 nm - Typical power consumption: 150 mW - ±5 V amplifier operating voltages - 50 ? AC load capability (AC-Coupled) - Hermetically-sealed TO-8 package - High reliability - Fast overload recovery - Pin-to-pin compatible with the C30950 - Light entry angle, over 130° - Model 1550E exhibits enhanced damage threshold - RoHS-compliant