Silicon Carbide (SiC) Schottky Diodes offer superior dynamic and thermal performance over conventional Silicon power diodes.
SiC Schottky Diode Features
- Essentially zero forward and reverse recovery = reduced switch and diode switching losses
- Temperature independent switching behavior = stable high temperature performance
- Positive temperature coefficient of VF = ease of parallel operation
- Usable 175°C Junction Temperature = safely operate at higher temperatures
SiC Schottky Diode Benefits
- Improved System Efficiency
- Higher Reliability
- Lower System Switching Losses
- Lower System Cost & Reduced System Size
- Smaller EMI Filter
- Smaller Magnetic Components
- Smaller Heat-Sink
- Smaller Switches, Eliminate Snubbers
