MOS FETs

Silicone Carbide (SiC) Schottky MOSFETs offer superior dynamic and thermal performance over conventional Silicon power MosFETs. The table below summarizes the advantages of SiC vs Si power discretes.

Characteristics	SiC vs. Si	Results	Benefits
Breakdown Field	10x Higher	Lower On-Resistance	Higher efficiency
Band Gap	3x Higher	Higher operating temperature	Improved cooling
Thermal conductivity	3x Higher	Higher power density	Higher current capabilities
Positive Temperature coefficient	-	Self regulation	Easy paralleling
Temperature Independent switching behavior	-	Stable high temperature performance	Lower losses
Almost no Reverse Recovery charge	-	Lower switching losses Higher switching capabilities	Higher performance

Features

Microsemi SiC MosFETs Advantages - Best in Class RDS(on) vs Temperature: leads to lower switching losses as well as stability over the complete operating temperature range. - Longest Short Circuit Withstand Rating: highest simple easy control circuit design

SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability. Microsemi has applied its extensive expertise in power semiconductor integration and packaging to develop its family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality. The modules also allow designers to shrink system size and weight, while reducing total systems costs.