Microchip – 1200V Silicon Carbide Power MOSFET Module

Product Overview

SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.

Microsemi has applied its extensive expertise in power semiconductor integration and packaging to develop its family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality. The modules also allow designers to shrink system size and weight, while reducing total systems costs.



Phase Leg Silicon Carbide Power Module

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