There’s a growing demand for Silicon Carbide (SiC) power products that improve system efficiency, robustness and power density in Automotive, Industrial and Mil/Aero applications. Microchip Technology Inc’s Microsemi subsidiary has announced the release of the SiC power device family, offering proven ruggedness and the performance benefits of wide-bandgap technology. The new SiC power device family complements Microchip’s microcontroller (MCUs) and analogue solutions, which is part of the growing family of SiC products within the Automotive industry, meeting the stringent requirements of Electric Vehicles (EVs) and other high-power applications in different markets.
Introducing the 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) to join Microchip’s current portfolio of SiC power modules, there are over 35 discrete products that offers outstanding ruggedness proven through rigorous testing, that are available in volume along with comprehensive development services, tools and reference designs. Microchip offers a broad family of SiC die, discrete and power modules in a range of voltage, current rating and package types.
Rich Simocic, the Senior Vice President of Microchip’s Discrete and Power Management unit said “SiC technology’s accelerated evolution and adoption has begun, and Microchip offers both a long heritage in this market and the ongoing commitment to playing a leadership role in ensuring that global supply continues to meet growing demand for these products… We are building out our portfolio with reliable products that are backed by the strong support infrastructure and supply chain that our customers need to execute and scale their development programs.”
Microchip’s SiC MOSFETs and SBDs offers more efficient switching at higher frequencies and with the ability to withstand ruggedness levels which are considered critical for promoting long-term reliability; these perform ~20% better than other SiC diodes in Unclamped Inductive Switching (UIS) ruggedness tests that measures performance of the devices that can withstand degradation or premature failure under avalanche conditions – Microchip’s SiC MOSFETs outperform competition products in the marketplace by demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters, even after 100,000 cycles of Repetitive UIS (RUIS) testing. These products are suitable for the growing number of EV systems including external charging stations, onboard chargers, DC-DC converters and powertrain/traction control solutions.
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