Testing GaN to Failure to Create Devices More Robust Than Silicon

Posted on

Presenting the ‘Testing GaN to Failure to Create Devices More Robust Than Silicon’ webinar on January 26th at 16:00 GMT as part of EPC’s How to GaN series. This session will focus on the latest results of extensive reliability testing of eGaN FETs and ICs.

What you will learn

  • A physics-based lifetime model with supporting evidence to project the lifetime of an eGaN device under gate stress over all voltages and temperature ranges.
  • A first-principles mathematical model to describe the dynamic RDS(on) effect in eGaN FETs from the basic physics of hot carrier scattering into surface traps. This model is most useful for predicting lifetimes over all voltages and temperatures in more complex mission profiles.
  • Field reliability data generated over a period of four years and 226 billion hours of operation, most of which are on vehicles or used in telecommunication base stations.

Presenters and panelists will be available following the presentation for a live Q& A session.

After registering, you will receive a confirmation email containing information about joining the webinar.

All registrants will be entered for a chance to win a copy of GaN Transistors for Efficient Power Conversion, Third Edition.

Click Here to Register Now